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february 2009 rev 1 1/14 14 STD95N4LF3 n-channel 40 v, 5.0 m ? , 80 a dpak stripfet? power mosfet features 100% avalanche tested logic level drive applications switching application ? automotive description this n-channel enhancement mode power mosfet is the latest refinement of stmicroelectronics? unique "single feature size" strip-based process with fewer critical alignment steps and therefore exceptional manufacturing reproducibility. the resu lting transistor has extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. figure 1. internal schematic diagram type v dss r ds(on) max i d p d STD95N4LF3 40 v < 6.0 m ? 80 a (1) 1. value limited by wire bonding 110 w dpak 1 3 am01474v1 d (tab or 2) g(1) s ( 3 ) table 1. device summary order code marking package packaging STD95N4LF3 95n4l dpak tape and reel www.st.com
contents STD95N4LF3 2/14 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STD95N4LF3 electrical ratings 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 40 v v gs gate-source voltage 16 v i d (1) 1. value limited by wire bonding drain current (continuous) at t c = 25 c 80 a i d drain current (continuous) at t c = 100 c 65 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 320 a p tot total dissipation at t c = 25 c 110 w derating factor 0.73 w/c dv/dt (3) 3. i sd 80 a, di/dt 40 a/s, v ds v (br)dss , t j t jmax peak diode recovery voltage slope 8 v/ns e as (4) 4. starting t j = 25 c, i d = 40 a, v dd = 35 v figure 16 and figure 17 single pulse avalanche energy 400 mj t j t stg operating junction temperature storage temperature -55 to 175 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1.36 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 2oz cu board thermal resistance ju nction-pcb max 50 c/w
electrical characteristics STD95N4LF3 4/14 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs =0 40 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating @125 c 10 100 a a i gss gate-body leakage current (v ds = 0) v gs = 16 v 200 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 2.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 40 a v gs = 5 v, i d = 40 a 5.0 6.0 9.0 m ? m ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward transconductance v ds = 25 v, i d = 40 a 150 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 2500 560 50 pf pf pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 20 v, i d = 40 a r g =4.7 ? v gs = 10 v (see figure 13 and figure 18 ) 7.5 45 45 11 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 20 v, i d = 80 a, v gs = 10 v (see figure 14 ) 50 7 9.5 70 nc nc nc
STD95N4LF3 electrical characteristics 5/14 table 6. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) 80 320 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 80 a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a, di/dt = 100 a/s, v dd = 20 v, t j = 150 c (see figure 15 and figure 19 ) 40 55 3 ns nc a
electrical characteristics STD95N4LF3 6/14 2.1 electrical characteri stics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. static drain-source on resistance figure 7. normalized b vdss vs temperature i d 100 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100 s 1m s 10m s t j =175c t c =25c s ingle p u l s e am0152 8 v1 i d 150 100 50 0 0 2 v d s (v) 4 (a) 1 3 5 200 250 6 7 8 9 3 00 3 v 4v v g s =10v am01529v1 i d 150 100 50 0 0 4 v g s (v) 8 (a) 2 6 200 250 3 00 v d s =10v am015 3 0v1 r d s (on) 5.6 5.4 5.2 5.0 0 20 i d (a) (m ? ) 10 3 0 5. 8 6.0 6.2 6.4 v g s =5v 6.6 50 40 60 70 8 0 am015 3 2v1 bv d ss -50 0 t j (c) (norm) 50 100 0. 8 0.9 1.0 1.1 150 am015 3 1v1
STD95N4LF3 electrical characteristics 7/14 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =20v v g s =10v i d = 8 0a 50 12 am015 33 v1 c 3 500 1000 500 0 0 10 v d s (v) (pf) 5 15 ci ss co ss 25 20 3 0 3 5 1500 2000 2500 3 000 4000 4500 5000 v d s =25v v g s =0 f=1mhz cr ss am015 3 4v1 v g s (th) 0.6 0.4 0.2 0 -50 0 t j (c) (norm) 50 100 150 1.2 1.0 0. 8 1.6 1.4 am015 3 5v1 r d s (on) 0.6 0.4 0.2 0 -50 0 t j (c) (norm) 50 100 150 1.2 1.0 0. 8 1.6 1.4 am015 3 6v1
test circuits STD95N4LF3 8/14 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STD95N4LF3 test circuits 9/14 figure 19. diode reverse recovery waveform
package mechanical data STD95N4LF3 10/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
STD95N4LF3 package mechanical data 11/14 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 a2 0.0 3 0.2 3 b 0.64 0. 9 0 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.2 8 e1 4.40 4.60 h 9 . 3 5 10.10 l1 l1 2. 8 0 l2 0. 8 0 l4 0.60 1 r0.20 v2 0 o 8 o to-252 (dpak) mechanical data 006 8 772_g
packing mechanical data STD95N4LF3 12/14 5 packing mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
STD95N4LF3 revision history 13/14 6 revision history table 7. document revision history date revision changes 11-feb-2009 1 first release
STD95N4LF3 14/14 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2009 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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